Abstract
P-channel WSe2 FETs along with multilayer graphene source/drain (S/D) are demonstrated by the CVD growth of the WSe2 monolayer to the patterned graphene. Multilayer graphene (MLG) is adopted to reduce contact resistance while the monolayer WSe2 served as the channel for the electrostatics integrity of the FET. Furthermore, by increasing the p-type doping concentration of the graphene S/D, the I-on /I-off ratio can be enhanced to 10(8) and the unipolar p-channel characteristics are retained regardless the choice of the work function of the metal used for the S/D contact.