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High Power GaN-based Blue Superluminescent Diode Exceeding 450 mW
Conference proceeding

High Power GaN-based Blue Superluminescent Diode Exceeding 450 mW

Abdullah A. Alatawi, Jorge A. Holguin-Lerma, Chao Shen, Mohammad Khaled Shakfa, Abdullah A. Alhamoud, Abdulrahman M. Albadri, Ahmed Y. Alyamani, Tien Khee Ng, Boon S. Ooi and IEEE
2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC), pp.129-130
IEEE International Semiconductor Laser Conference
01/01/2018

Abstract

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Physics Physics, Applied Science & Technology Technology
We demonstrate a high power blue emitting superluminescent diode (SLD) with a tilted-facet configuration. An optical power of 457 mW with a broad spectral bandwidth of 6.5 nm was obtained under pulsed current injection of 1A, leading to a large power-bandwidth product of similar to 2970 mW.nm.

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