Abstract
This paper proposes a high temperature design of an integrated three phase inverter using direct drive GaN HEMT devices and metal clad PCBs (MCPCB). The inverter features a modular design approach, utilizing a 600 V direct drive GaN device with integrated overcurrent and overtemperature protection. Aluminum based PCBs with high thermal conductivity are also used to achieve a natural cooling solution with only air convection at an ambient temperature of up to 95°C Thermal . simulations are performed to verify the thermal performance of the system. The inverter was built and experimentally tested in a thermal chamber to verify the drive performance at high temperatures. The design achieves a continues power of 1.8 kW. Peak efficiencies of 99.8% and 99.45% are achieved at room temperature and 95°C respectively.