High-performance DUV-C Solar-Blind n-ZnO Quantum Dot/p-CuO Micro-pyramid Photodetector Arrays

Iman S. Roqan; Norah Alwadai; Somak Mitra; Hadeel Amoudi; IEEE

doi:10.1109/EDTM53872.2022.9798339

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Conference proceeding

High-performance DUV-C Solar-Blind n-ZnO Quantum Dot/p-CuO Micro-pyramid Photodetector Arrays

Iman S. Roqan, Norah Alwadai, Somak Mitra, Hadeel Amoudi and IEEE

6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022), pp.185-187

01/01/2022

DOI: https://doi.org/10.1109/EDTM53872.2022.9798339

Abstract

Engineering

Engineering, Electrical & Electronic

Science & Technology

Technology

The photodetector is fabricated simply by spray-coating ZnO QDs on a CuO micro-pyramid array. The p-n junction structure enhances the performance of the DUV n-ZnO/p-CuO/p-Si micro-pyramid device. The photodetector is characterized by high photo-responsivity at 244 nm (UV-C) with fast photoresponse and a cut-off at 280 nm. High self-powered photoresponse is confirmed. These high-performance solar-bind DUV photodetector arrays can be scaled up for mass production of a wide range of applications.

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Title: High-performance DUV-C Solar-Blind n-ZnO Quantum Dot/p-CuO Micro-pyramid Photodetector Arrays
Creators - without role: Iman S. Roqan - King Abdullah University of Science and Technology
Norah Alwadai - Princess Nourah bint Abdulrahman University
Somak Mitra - King Abdullah University of Science and Technology
Hadeel Amoudi - King Abdullah University of Science and Technology
IEEE
Publication Details: 6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022), pp.185-187
Publisher: IEEE
Number of pages: 3
Identifiers: 9927926708331
Academic Unit: King Abdullah University of Science & Technology; Princess Nourah bint Abdulrahman University
Language: English
Resource Type: Conference proceeding