High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/metal gate stacks and additive uniaxial strain for 22 nm technology node

S. Suthram; P. Majhi; G. Sun; P. Kalra; H. R. Harris; K. J. Choi; D. Heh; J. Oh; D. Kelly; R. Choi; B. J. Cho; M. M. Hussain; C. Smith; S. Banerjee; W. Tsai; S. E. Thompson; H. H. Tseng; R. Jammy; IEEE

doi:10.1109/IEDM.2007.4419049

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High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/metal gate stacks and additive uniaxial strain for 22 nm technology node

S. Suthram, P. Majhi, G. Sun, P. Kalra, H. R. Harris, K. J. Choi, D. Heh, J. Oh, D. Kelly, R. Choi, …

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, pp.727-730

IEEE International Electron Devices Meeting

01/01/2007

DOI: https://doi.org/10.1109/IEDM.2007.4419049

Abstract

Engineering

Engineering, Electrical & Electronic

Engineering, Multidisciplinary

Science & Technology

Technology

We demonstrate for the first time that both SiGe and Ge channel with high-k/metal gate stack pMOSFETs show similar uniaxial stress enhanced drive current as Si which is expected from k.p calculations. We also demonstrate experimentally that pMOSFETs with strained quantum wells (QW) in the Si-Ge system exhibited high performance and low off-state leakage comparable to optimized gate stacks on Si. These results significantly hasten the feasibility of realizing SiGe or Ge channel pMOSFETs for 22 nm and beyond.

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Title: High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/metal gate stacks and additive uniaxial strain for 22 nm technology node
Creators - without role: S. Suthram - University of Florida
P. Majhi - Intel
G. Sun - University of Florida
P. Kalra - University of California, Berkeley
H. R. Harris - AMD, Sunnyvale, CA USA
K. J. Choi - Jusung Engn, Gwangju, South Korea
D. Heh - Sematech
J. Oh - Sematech
D. Kelly - Sematech
R. Choi - Sematech
B. J. Cho - Duke-NUS Medical School
M. M. Hussain - Sematech
C. Smith - Sematech
S. Banerjee - Sematech
W. Tsai - Intel, Heverlee, Belgium
S. E. Thompson - University of Florida
H. H. Tseng - Sematech
R. Jammy - IBM
IEEE
Publication Details: 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, pp.727-730
Series: IEEE International Electron Devices Meeting
Publisher: IEEE
Number of pages: 3
Identifiers: 9943176208331
Academic Unit: King Saud University
Language: English
Resource Type: Conference proceeding