Sign in
Back
High performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active region
Conference proceeding

High performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active region

Mohammed Zahed Mustafa Khan, Mohammed Abdul Majid, Tien Khee Ng and Boon S Ooi
11/11/2013
DOI: https://doi.org/10.1109/IPCon.2013.6656386

Abstract

Photonics Conference (IPC), 2013 IEEE The demonstration of high power, ultra-low ripple superluminescent diode using multiple quantum-dash-in-a-well layers with variable barrier thickness is reported. The device exhibits >20 mW power, < 0.3dB ripple, and > 80 nm 3dB bandwidth at ~1.55 μm.

Metrics

1 Record Views

Details