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High quality postgrowth emission wavelength engineering of InAs/InAlGaAs/InP quantum dash-in-well laser
Conference proceeding

High quality postgrowth emission wavelength engineering of InAs/InAlGaAs/InP quantum dash-in-well laser

H.S. Djie, Y. Wang, B.S. Ooi, D.N. Wang, J.C.M. Hwang, G.T. Dang, W.H. Chang and IEEE
LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, pp.116-117
10/2006
DOI: https://doi.org/10.1109/LEOS.2006.278883

Abstract

Annealing III-V semiconductor materials Indium phosphide Laser tuning Optical control Optical materials Optical sensors Photonic band gap Quantum dots Quantum well lasers
We demonstrate bandgap tuned InAs/InAlGaAs quantum-dash-in-well lasers grown on InP material using postgrowth quantum heterostructure intermixing. Compared to the control (non-intermixed) lasers, the light-current characteristics of lasers with emission wavelength tuned by over 100 nm shows insignificant changed suggesting that the quality of the intermixed material is well-preserved

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