High-rate electron cyclotron resonance etching of GaAs via holes

Conference proceeding

Peer reviewed

Y. W Chen, B. S Ooi, G. I NG and C. L Tan

Materials science & engineering. B, Solid-state materials for advanced technology, Vol.74(1-3), pp.282-285

Third international conference on low dimensional structures and devices, September 15-17, 1999, Antalya, Turkey

01/05/2000

Abstract

Applied sciences

Electronics

Exact sciences and technology

Microelectronic fabrication (materials and surfaces technology)

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: High-rate electron cyclotron resonance etching of GaAs via holes
Creators - without role: Y. W Chen - Nanyang Technological University
B. S Ooi - Nanyang Technological University
G. I NG - Nanyang Technological University
C. L Tan - Nanyang Technological University
Publication Details: Materials science & engineering. B, Solid-state materials for advanced technology, Vol.74(1-3), pp.282-285
Conference: Third international conference on low dimensional structures and devices, September 15-17, 1999, Antalya, Turkey
Publisher: Elsevier
Identifiers: 9942147508331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding