Abstract
Conference Title: 2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Conference Start Date: 2014, Oct. 6 Conference End Date: 2014, Oct. 9 Conference Location: Millbrae, CA, USA We demonstrate a flexible version of the semiconductor industry's most advanced transistor topology - FinFET on silicon-on-insulator (SOI) with sub-20 nm fins and high-κ/metal gate stacks. This is the most advanced flexible (0.5 mm bending radius) transistor on SOI ever demonstrated for exciting opportunities in high performance flexible electronics with stylish product design. For the first time, we characterize such device from room to high temperature (150 °C). And we discuss the dependence of the I-V curves with temperature.