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High voltage modulator for pulsed ion implantation
Conference proceeding

High voltage modulator for pulsed ion implantation

A.A. Elmoursi, G.W. Malaczynski, A.H. Hamdi and IEEE
Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting, pp.682-685 vol.1
1991
DOI: https://doi.org/10.1109/IAS.1991.178310

Abstract

Aluminum Costs Ion implantation Nitrogen Oscilloscopes Pulse circuits Pulse modulation Spark gaps Switching circuits Voltage
A low cost and reliable high voltage pulse modulator is described whose design is based on R-C circuits and which uses triggered spark gaps for switching. Oscilloscope photographs of the output pulse indicate the success of this design in fulfilling the waveform requirements. Furthermore, this pulse modulator was used in the pulse implantation of aluminum with nitrogen ions.< >

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