Abstract
In this work, the impact of Negative Bias Temperature Instability (NBTI) and Channel Hot Carrier (CHC) stresses on different regions along the channel of the MOSFET gate dielectric is analyzed at the nanoscale with Conductive Atomic Force Microscope (CAFM). In particular, it is demonstrated that, while the BTl degradation is homogeneous, the CHC stress degradation is higher close to source (S) and drain (D). When comparing strained and non-strained channel devices, the results show that strained devices are more sensitive to CHC stress.