Abstract
Transparent thin film transistors (TFTs) with un-doped and 5 at% lithium (Li) doped zinc oxide (ZnO) as the channel layers were fabricated by sol-gel spin coating method. The crystallinity of ZnO was significantly improved with incorporation of 5 at% of lithium in ZnO. The un-doped ZnO TFTs showed a saturation field effect mobility of 1.3 cm(2)/Vs with an I(on)/I(off) ratio of 1.6x 10(6). However, 5 at% Li-doped ZnO TFTs showed superior performance compared to the un-doped ZnO TFTs with a saturation field effect mobility of 3.1 cm(2)/Vs and an I(on)/I(off) ratio of 3.4x 10(6).