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Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth
Conference proceeding   Peer reviewed

Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth

Ryota Senda, Aya Miura, Takeshi Kawashima, Daisuke Lida, Tetsuya Nagai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, Vol.5(9), pp.3045-3047
Physica Status Solidi C-Current Topics in Solid State Physics
07/2008
DOI: https://doi.org/10.1002/pssc.200779252

Abstract

Materials Science Materials Science, Multidisciplinary Optics Physical Sciences Physics Physics, Applied Science & Technology Technology
We report the fabrication of an epitaxial lateral overgrown (ELO) GaInN layer on a high crystalline-quality-grooved GaN template, which is improved by a sidewall ELO (SELO) technology. The photoluminescence peak intensity of ELO-grown GalnN layer on the SELO GaN underlying layer is twice as high as that of ELO-grown GalnN layer on the m-plane GaN template. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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