Abstract
GaInN-based light-emitting diodes having m-plane heterostructures and multi quantum well (MQW) were fabricated on m-plane SiC by sidewall-seeded epitaxial lateral over-growth. Defects such as stacking faults or dislocations strongly affect the emission wavelength and efficiency of MQW. Control of the V/III ratio during growth is found to be very effective for growing GaN from only one sidewall, by which we can reduce the area of the high-defect-density region. A light emitting diode (LED) with high internal quantum efficiency and an almost single peak LED was successfully fabricated.