Improving the electrical performance of a CAFM for gate oxide reliability measurements

M. Lanza; L. Aguilera; M. Porti; M. Nafria; X. Aymerich

doi:10.1109/SCED.2009.4800474

Back

Conference proceeding

Improving the electrical performance of a CAFM for gate oxide reliability measurements

M. Lanza, L. Aguilera, M. Porti, M. Nafria and X. Aymerich

PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES, pp.234-237

01/01/2009

DOI: https://doi.org/10.1109/SCED.2009.4800474

Abstract

Engineering

Engineering, Electrical & Electronic

Materials Science

Materials Science, Multidisciplinary

Nanoscience & Nanotechnology

Optics

Physical Sciences

Science & Technology

Science & Technology - Other Topics

Technology

Anew configuration of conductive atomic force microscope (CAFM) is presented, which is based in a standard CAFM where the typical IN converter has been replaced by a log 1-V amplifier. This substitution extends the current dynamic range from 1-100 pA to 1 pA-1 mA. With the broadening of the current dynamic range, the CAFM can access new applications, such as the reliability evaluation of metal-oxide-semiconductor gate dielectrics. As an example, the setup has been tested by analyzing breakdown spots induced in ultrathin gate SiO(2) layers.

Metrics

1 Record Views

Details

Title: Improving the electrical performance of a CAFM for gate oxide reliability measurements
Creators - without role: M. Lanza - Universitat Autònoma de Barcelona
L. Aguilera - Universitat Autònoma de Barcelona
M. Porti - Universitat Autònoma de Barcelona
M. Nafria - Universitat Autònoma de Barcelona
X. Aymerich - Universitat Autònoma de Barcelona
Contributors - without role: A G Loureiro
N S Iglesias
MAA Rodriguez
E C Figueroa
Publication Details: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES, pp.234-237
Publisher: IEEE
Number of pages: 4
Identifiers: 9941630008331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding