InAlN/GaN MOSHEMTs with High Drain Current of 2.3 A/mm High On/Off Ratio of 10(12) and Low SS of 64 mV/dec Enabled by Atomic-Layer-Epitaxial MgCaO as Gate Dielectric

Conference proceeding

Hong Zhou, Xiabing Lou, Heng Wu, Sami Alghamdi, Shiping Guo, R. G. Gordon, Peide D. Ye and IEEE

2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), pp.57-58

01/01/2015

Abstract

Engineering

Engineering, Electrical & Electronic

Instruments & Instrumentation

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Title: InAlN/GaN MOSHEMTs with High Drain Current of 2.3 A/mm High On/Off Ratio of 10(12) and Low SS of 64 mV/dec Enabled by Atomic-Layer-Epitaxial MgCaO as Gate Dielectric
Creators - without role: Hong Zhou - Supreme Council Of Health
Xiabing Lou - Harvard University
Heng Wu - Supreme Council Of Health
Sami Alghamdi - Supreme Council Of Health
Shiping Guo - IQE RF LLC, Somerset, NJ 08873 USA
R. G. Gordon - Harvard University
Peide D. Ye - Supreme Council Of Health
IEEE
Publication Details: 2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), pp.57-58
Publisher: IEEE
Number of pages: 2
Identifiers: 9938061108331
Academic Unit: King Abdulaziz University
Language: English
Resource Type: Conference proceeding