InP quantum dot 7xxnm laser diodes

P.M. Smowton; M. Al-Ghamdi; G. Edwards; S. Shutts; A.B. Krysa

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Conference proceeding

InP quantum dot 7xxnm laser diodes

P.M. Smowton, M. Al-Ghamdi, G. Edwards, S. Shutts and A.B. Krysa

2009 9th IEEE Conference on Nanotechnology (IEEE-NANO), pp.508-509

07/2009

Abstract

Absorption

Density measurement

Diode lasers

Extraterrestrial measurements

Indium phosphide

Laser theory

Optical materials

Quantum dot lasers

Temperature

Threshold current

We describe the optimization of InP quantum dot material for laser applications, demonstrate some of the interesting physics that results from the nature of this material and describe initial results in promising application areas.

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Title: InP quantum dot 7xxnm laser diodes
Creators - without role: P.M. Smowton - Cardiff University
M. Al-Ghamdi - Cardiff University
G. Edwards - Cardiff University
S. Shutts - Cardiff University
A.B. Krysa - University of Sheffield
Publication Details: 2009 9th IEEE Conference on Nanotechnology (IEEE-NANO), pp.508-509
Publisher: IEEE
Identifiers: 9912067908331
Academic Unit: Al Baha University
Language: English
Resource Type: Conference proceeding