Influence of metal properties and photodiode parameters on the spectral response of n-GaN Schottky photodiode

Conference proceeding

Peer reviewed

C Touzi, A Rebey and B Eljani

Microelectronics journal, Vol.33(11), pp.961-965

10th SASIMI workshop, Nara, Japan, 2001

01/11/2002

Abstract

Applied sciences

Electronics

Exact sciences and technology

Optoelectronic devices

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: Influence of metal properties and photodiode parameters on the spectral response of n-GaN Schottky photodiode
Creators - without role: C Touzi - University of Monastir
A Rebey - University of Monastir
B Eljani - University of Monastir
Publication Details: Microelectronics journal, Vol.33(11), pp.961-965
Conference: 10th SASIMI workshop, Nara, Japan, 2001
Publisher: Elsevier Science
Identifiers: 9929159008331
Academic Unit: Qassim University
Language: English
Resource Type: Conference proceeding