Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes

Chao Shen; Changmin Lee; Tien Khee Ng; James S. Speck; Shuji Nakamura; Steven P. DenBaars; Boon S. Ooi; IEEE

doi:10.1109/CLEOPR.2017.8119071

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Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes

Chao Shen, Changmin Lee, Tien Khee Ng, James S. Speck, Shuji Nakamura, Steven P. DenBaars, Boon S. Ooi and IEEE

2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR), Vol.2017-, pp.1-2

01/01/2017

DOI: https://doi.org/10.1109/CLEOPR.2017.8119071

Abstract

Engineering

Engineering, Electrical & Electronic

Optics

Physical Sciences

Physics

Physics, Applied

Science & Technology

Technology

The challenges to realizing III-nitride photonic integrated circuit (PIC) are discussed. Utilizing InGaN-based multi-section laser diode (LD) on semipolar GaN substrate, the seamless on-chip integration of III-nitride waveguide photodetector (WPD) in the visible regime has been demonstrated.

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Title: Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes
Creators - without role: Chao Shen - King Abdullah University of Science and Technology
Changmin Lee - University of California, Santa Barbara
Tien Khee Ng - King Abdullah University of Science and Technology
James S. Speck - University of California, Santa Barbara
Shuji Nakamura - University of California, Santa Barbara
Steven P. DenBaars - University of California, Santa Barbara
Boon S. Ooi - King Abdullah University of Science and Technology
IEEE
Publication Details: 2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR), Vol.2017-, pp.1-2
Publisher: IEEE
Number of pages: 2
Grant note: KACST-KAUST-UCSB solid state lighting program (SSLP) KACST TIC R2-FP-008 / King Abdulaziz City for Science and Technology (KACST) BAS/1/1614-01-01 / King Abdullah University of Science and Technology (KAUST); King Abdullah University of Science & Technology
Identifiers: 9942013608331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding