Abstract
Previously, we reported on a single-pixel detector based on a lateral a-Se metal-semiconductor-metal structure, intended for indirect conversion X-ray imaging. This work is the continuous effort leading to the first prototype of an indirect conversion X-ray imaging sensor array utilizing lateral amorphous selenium. To replace a structurally-sophisticated vertical multilayer amorphous silicon photodiode, a lateral a-Se MSM photodetector is employed which can be easily integrated with an amorphous silicon thin film transistor passive pixel sensor array. In this work, both 2x2 macro-pixel and 32x32 micro-pixel arrays were fabricated and tested along with discussion of the results.