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Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO2 gate dielectric
Conference proceeding

Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO2 gate dielectric

Z B Zhang, S C Song, C Huffman, J Barnett, N Moumen, H Alshareef, P Majhi, M Hussain, M S Akbar, J H Sim, …
2005 Symposium on VLSI Technology, Digest of Technical Papers, pp.50-51
01/01/2005

Abstract

Computer Science Computer Science, Hardware & Architecture Engineering Engineering, Electrical & Electronic Science & Technology Technology
We report the process module development results and device characteristics of dual metal gate CMOS with TaSiN and Ru gate electrodes on HfO2 gate dielectric. The wet etch of TaSiN had a minimal impact on HfO2 (Delta EOT < 1 angstrom). A plasma etch process has been developed to etch Ru/TaN/Poly (PMOS) and TaSiN/Ru/TaN/Poly (NMOS) gate stacks simultaneously. Well behaved dual metal gate CMOS transistors have been demonstrated with L-g down to 85nm.

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