Abstract
Rapid thermal oxidation (RTO) of heteroepitaxial thin Si 1-x Ge x layers (x=0.85) at 815°C in dry O 2 has been studied. We have investigated the origin of interface defects in Si 0.15 Ge 0.85 /SiGeO 2 RTO oxides by electron paramagnetic resonance (EPR) through internal photoemission (IPE) technique. Spin concentration of the paramagnetic defect centers have been determined from EPR results. After IPE capacitance-voltage (C-V) and current-voltage (I-V) characteristics were measured at different bias conditions to observe the charge build up due to trapping at pre-existing defects or defect precursors. Calculated flat band voltage from high frequency C-V characteristics has been modeled and number of traps per unit area (N trap ) and capture cross-section (¿) of the traps have also been determined.