Interfacial reaction study of thermally annealed Ti film on 4H-SiC by soft X-ray emission spectroscopy

Conference proceeding

Peer reviewed

J Labis, A Ohi, M Hirai, M Kusaka and M Iwami

Surface science, Vol.493(1-3), pp.447-452

ISSI PDSC-2000: International Symposium on Surface and Interface: properties of different symmetry crossing 2000, Nagoya, Japan, 17-20 October 2000

01/11/2001

Abstract

Condensed matter: structure, mechanical and thermal properties

Diffusion; interface formation

Exact sciences and technology

Physics

Solid surfaces and solid-solid interfaces

Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)

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Title: Interfacial reaction study of thermally annealed Ti film on 4H-SiC by soft X-ray emission spectroscopy
Creators - without role: J Labis - Okayama University
A Ohi - Okayama University
M Hirai - Okayama University
M Kusaka - Okayama University
M Iwami - Okayama University
Publication Details: Surface science, Vol.493(1-3), pp.447-452
Conference: ISSI PDSC-2000: International Symposium on Surface and Interface: properties of different symmetry crossing 2000, Nagoya, Japan, 17-20 October 2000
Publisher: Elsevier Science
Grant note: Ministry of Education, Sports, Science and Technology
Identifiers: 9952356108331
Academic Unit: King Saud University
Language: English
Resource Type: Conference proceeding