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Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)
Conference proceeding

Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)

B. H Lee, C. D Young, N Moumen, J Bamett, P Lysaght, K. S Choi, H. C Wen, C Huffinan, H Alshareef, P Majhi, …
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, pp.859-862
IEEE International Electron Devices Meeting 2004 (IEDM technical digest)
2004

Abstract

Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors

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