- Title
- Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)
- Creators - without role
- B. H Lee - IBM Research - AustinC. D Young - IBM Research - AustinN Moumen - IBM Research - AustinJ Bamett - IBM, assignee 2706 Montopolis Drive, Austin, TX 78741, United StatesP Lysaght - IBM Research - AustinK. S Choi - IBM, assignee 2706 Montopolis Drive, Austin, TX 78741, United StatesH. C Wen - IBM Research - AustinC Huffinan - IBM, assignee 2706 Montopolis Drive, Austin, TX 78741, United StatesH Alshareef - IBMP Majhi - PhilipsS Gopalan - PhilipsJ Peterson - IBM Research - AustinR Choi - IBM Research - AustinP Kirsh - IBM Research - AustinH.-J LI - InfineraJ Gutt - IBM Research - AustinM Gardner - PhilipsH. R Huff - IBM Research - AustinP Zeitzoff - IBM Research - AustinR. W Murto - TI, assignee 2706 Montopolis Drive, Austin, TX 78741, United StatesL Larson - SematechC Ramiller - IBM Research - AustinJ. H Sim - IBM Research - AustinG Bersuker - IBM Research - AustinC. Y Kang - IBM Research - AustinR Harris - IBM Research - AustinG. A Brown - IBM Research - AustinK Matthews - IBM Research - AustinS. C Song - IBM, assignee 2706 Montopolis Drive, Austin, TX 78741, United Statesieee
- Publication Details
- IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, pp.859-862
- Conference
- IEEE International Electron Devices Meeting 2004 (IEDM technical digest)
- Publisher
- IEEE
- Identifiers
- 9944277108331
- Academic Unit
- King Abdullah University of Science & Technology
- Language
- English
- Resource Type
- Conference proceeding
Conference proceeding
Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, pp.859-862
IEEE International Electron Devices Meeting 2004 (IEDM technical digest)
2004
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