Investigating the environmental stability of Li-doped ZnO based thin film transistors by two dimensional numerical simulations

D Gupta; JongSu Jang; P K Nayak; Yongtaek Hong; IEEE

doi:10.1109/PHOTONICS.2010.5698883

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Investigating the environmental stability of Li-doped ZnO based thin film transistors by two dimensional numerical simulations

D Gupta, JongSu Jang, P K Nayak, Yongtaek Hong and IEEE

2010 23rd Annual Meeting of the IEEE Photonics Society, pp.309-310

11/2010

DOI: https://doi.org/10.1109/PHOTONICS.2010.5698883

Abstract

Atmospheric modeling

device simulation

environment stability

Li-doped ZnO

Numerical stability

Semiconductor process modeling

Stability criteria

Thin film transistor

Thin film transistors

Zinc oxide

We investigate effect of Li-doping upon environmental stability of ZnO TFTs by two dimensional simulations. TFTs modelled with acceptor like tail states and deep donor Gaussian defects obtained a good agreement with the experimental data.

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Title: Investigating the environmental stability of Li-doped ZnO based thin film transistors by two dimensional numerical simulations
Creators - without role: D Gupta - Seoul National University
JongSu Jang - Seoul National University
P K Nayak - Seoul National University
Yongtaek Hong - Seoul National University
IEEE
Publication Details: 2010 23rd Annual Meeting of the IEEE Photonics Society, pp.309-310
Publisher: IEEE
Identifiers: 9944796408331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding