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Investigation of surface morphology of n-type GaN after photoelectrochemical reaction in various solutions for H-2 gas generation
Conference proceeding   Peer reviewed

Investigation of surface morphology of n-type GaN after photoelectrochemical reaction in various solutions for H-2 gas generation

Katsushi Fujii, Takashi Ito, Masato No, Yasuhiro Iwaki, Takafumi Yao and Kazuhiro Ohkawa
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, Vol.4(7), pp.2650-2653
Physica Status Solidi C-Current Topics in Solid State Physics
06/2007
DOI: https://doi.org/10.1002/pssc.200674917

Abstract

Physical Sciences Physics Physics, Condensed Matter Science & Technology
Surface morphology and chemical composition at n-type GaN surface after photoelectrochemical reactions were investigated. Whisker-like Ga oxides were observed in the lower pH solutions and hexagonal columns were observed in the higher pH solutions. The results indicate that different reactions occur in the different pH solutions. Dissolution amount was the lowest at a neutral pH solution. (c) 2007 WILEY-NCH Verlag GmbH & Co. KGaA, Weinheim.

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