Investigation of the role of a-Si:H based-alloy solar cell thickness on 1.00 MeV proton irradiation resistance

S.S. Abdulaziz; J.R. Woodyard; IEEE

doi:10.1109/PVSC.1991.169408

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Investigation of the role of a-Si:H based-alloy solar cell thickness on 1.00 MeV proton irradiation resistance

S.S. Abdulaziz, J.R. Woodyard and IEEE

The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991, pp.1248-1253 vol.2

1991

DOI: https://doi.org/10.1109/PVSC.1991.169408

Abstract

Amorphous silicon

Annealing

Computational Intelligence Society

Crystallization

Degradation

Electric resistance

Photovoltaic cells

Protons

Temperature

Transistors

The role of thickness and composition in the 1.00 MeV proton radiation resistance of hydrogenated amorphous silicon based-alloys solar cells is reported. Rutherford backscattering spectrometry is used to analyze the cells. Single-junction a-Si:H and a-Si/sub x/Ge/sub 1-x/:H, and dual-junction a-Si:H solar cells were investigated using proton fluences in the 1.00*10/sup 13/ to 1.00*10/sup 15/ cm/sup -2/ range. The investigations show that 1.10 mu m thick single-junction a-Si:H cells have a lower radiation resistance than 0.32 mu m thick cells.< >

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Title: Investigation of the role of a-Si:H based-alloy solar cell thickness on 1.00 MeV proton irradiation resistance
Creators - without role: S.S. Abdulaziz - Wayne State University
J.R. Woodyard - Wayne State University
IEEE
Publication Details: The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991, pp.1248-1253 vol.2
Publisher: IEEE
Identifiers: 9925737608331
Academic Unit: Prince Sattam Bin Abdulaziz University
Language: English
Resource Type: Conference proceeding