Abstract
Single gate and double gate GNRFETs with 5 -20% doping of potassium (K) in source (S), drain (D) and channel region having width (W)=2 and 5 nm have been synthesized. On-to-off current ratio (I-ON/I-OFF) and sub-threshold swing (S) for single gate GNRFET having W=2nm with 10% of K doping have been found to be similar to 10(7) and similar to 20mV/dec, respectively whereas these value for double gate have been found similar to 10(8) and similar to 17mV/dec. Intrinsic speed (f(S)) and intrinsic gain (A(V)) have been calculated as similar to 12 THz and 20, respectively (at low bias of gate-to-source voltage, V-GS = 0.1 V and drain-to-source voltage, V-DS = 0.1 V), for single gate configuration. However, for double gate, A(V) becomes similar to 2.5 times higher but f(S) is reduce by similar to 20%. Furthermore, the device follows a square-law, which would greatly suppress odd-order harmonics and improves dynamic range in designing of low power communication system. Using a new figure-of-merit (FoM) involving A(V), f(S), dynamic power (P-DYN) and off state leakage power (P-OFF) consumption, it has been found that double gate GNRFET gives significant advantage over carbon nano-tubes (CNTs) FET and single gate GNRFET having similar dimensions. The on current I-ON and f(S) compare very favorably with both current International Technology Roadmap for Semiconductors (ITRS) Road Map specifications and available experimental results for GNRFET.