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Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization
Conference proceeding

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

Ahmed Fadil, Yiyu Ou, Daisuke Iida, Oleksii Kopylov and Haiyan Ou
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Conference Proceedings, p.1
01/01/2016

Abstract

Electro-optics Gallium nitrides Light emitting diodes Metallizing Plasmonics
Conference Title: 2016 Conference on Lasers and Electro-Optics (CLEO) Conference Start Date: 2016, June 5 Conference End Date: 2016, June 10 Conference Location: San Jose, CA, USA We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.

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