Lasing Output and Threshold Current Density in P-Doped InP/AlGaInP Quantum Dot Laser Diodes

M. S. Al-Ghamdi; P. M. Smowton; A. B. Krysa; IEEE Comp Soc

doi:10.1109/ISLC.2014.78

Back

Conference proceeding

Lasing Output and Threshold Current Density in P-Doped InP/AlGaInP Quantum Dot Laser Diodes

M. S. Al-Ghamdi, P. M. Smowton, A. B. Krysa and IEEE Comp Soc

2014 24TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2014), pp.119-120

IEEE International Semiconductor Laser Conference

01/01/2014

DOI: https://doi.org/10.1109/ISLC.2014.78

Abstract

Engineering

Engineering, Electrical & Electronic

Physical Sciences

Physics

Physics, Applied

Science & Technology

Technology

We demonstrate the p-doping effect on lasing output and threshold current density. The lasing wavelength peak became narrower as the doping concentration increases and has a red shift which consistent with optical absorption ground state.

Metrics

1 Record Views

Details

Title: Lasing Output and Threshold Current Density in P-Doped InP/AlGaInP Quantum Dot Laser Diodes
Creators - without role: M. S. Al-Ghamdi - King Abdulaziz University
P. M. Smowton - Cardiff University
A. B. Krysa - University of Sheffield
IEEE Comp Soc
Publication Details: 2014 24TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2014), pp.119-120
Series: IEEE International Semiconductor Laser Conference
Publisher: IEEE
Number of pages: 2
Identifiers: 9912166108331
Academic Unit: Al Baha University
Language: English
Resource Type: Conference proceeding