Abstract
We report a principle that allows citing visible light emitting semiconductor patterns of arbitrary shape down to the sub-micrometer scale. We demonstrate that porous semiconductor growth can be electrochemically initiated preferentially at surface defects created in an n-type substrate by Si(++) focused ion beam bombardment. For n-type material in the dark, the electrochemical pore formation potential (Schottky barrier breakdown voltage) is significantly lower at the implanted locations than for an unimplanted surface. This difference in the threshold voltages is exploited to achieve the selectivity of the pore formation process. Visible light emitting patterns of porous Si and GaAs bye been created in this way. At present, the size of the structures is limited only by the diameter of the writing ion beam, and pattern diameters in the 50-200-nm range are possible.