Light-induced degradation of very low resistivity multi-crystalline silicon solar cells

S. De Wolf; P. Choulat; J. Szlufcik; I. Perichaud; S. Martinuzzi; C. Hassler; W. Krumbe; IEEE

doi:10.1109/PVSC.2000.915751

Back

Conference proceeding

Light-induced degradation of very low resistivity multi-crystalline silicon solar cells

S. De Wolf, P. Choulat, J. Szlufcik, I. Perichaud, S. Martinuzzi, C. Hassler, W. Krumbe and IEEE

Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), Vol.2000-, pp.53-56

2000

DOI: https://doi.org/10.1109/PVSC.2000.915751

Abstract

Annealing

Boron

Conductivity

Crystalline materials

Crystallization

Lighting

Photovoltaic cells

Purification

Silicon

Thermal degradation

An J/sub sc/ degradation under illumination has been measured for finished solar cells processed from multicrystalline B-doped Si-substrates with resistivities below 0.1 /spl Omega/ cm. This phenomenon has been studied as function of the different applied processing steps and as function of the boron- and oxygen-concentration of the substrate. The observed effect is likely related to a reversible formation of boron-oxygen complexes, introducing traps in the bandgap. This behaviour is similar to what has been reported in literature for carrier lifetime instabilities of 1 /spl Omega/ cm Cz-Si. The degradation was found to be fully reversible by a low-temperature anneal at about 200/spl deg/C, provided that the degradation causing defects have not been passivated by hydrogenation.

Metrics

1 Record Views

Details

Title: Light-induced degradation of very low resistivity multi-crystalline silicon solar cells
Creators - without role: S. De Wolf - IMEC
P. Choulat
J. Szlufcik
I. Perichaud
S. Martinuzzi
C. Hassler
W. Krumbe
IEEE
Publication Details: Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), Vol.2000-, pp.53-56
Publisher: IEEE
Identifiers: 9944789608331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding