Sign in
Back
Low Temperature Threshold Current Density Effect by P-Doping in InP/AlGaInP Quantum Dot Laser Diodes
Conference proceeding

Low Temperature Threshold Current Density Effect by P-Doping in InP/AlGaInP Quantum Dot Laser Diodes

M. S. Al-Ghamdi, P. M. Smowton, A. B. Krysa and IEEE
2013 IEEE PHOTONICS CONFERENCE (IPC), pp.238-239
IEEE Photonics Conference
01/01/2013

Abstract

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Science & Technology Technology
We demonstrate the effect of p-doping on threshold current density at low temperatures which shows distinctive behavior explained by spontaneous emission spectra taken at thresholds. Their full width half maximum accompanied with carrier distribution is higher in p-doped structure compare to undoped one.

Metrics

1 Record Views

Details