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Low damage reactive ion etching process for fabrication of ridge waveguide lasers
Conference proceeding

Low damage reactive ion etching process for fabrication of ridge waveguide lasers

B C Qiu, B S Ooi, A C Bryce, S E Hicks, CDW Wilkinson, R M DeLaRue, J H Marsh and IEEE
1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, pp.578-581
CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS
01/01/1997
DOI: https://doi.org/10.1109/ICIPRM.1997.600232

Abstract

Engineering Engineering, Electrical & Electronic Materials Science Materials Science, Multidisciplinary Optics Physical Sciences Science & Technology Technology
The damage produced during CH4/H-2 reactive ion etching (RIE) processes has been measured using low temperature photoluminescence. The damage depth profile was estimated and a low level damage RIE process has been developed. The process has been used to fabricate InGaAs/InGaAsP ridge waveguide lasers containing 5 quantum wells with threshold currents, 43-45 mA for 500 mu m lasers, that are indistinguishable from those of wet-etched devices.

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