Abstract
In this work, we report on low frequency noise studies in MoS 2 NC-FETs for the first time. Low frequency noise of the devices is systematically studied depending on various interfacial oxides, different thicknesses of interfacial oxide, and ferroelectric H 0.5 Z 0.5 O (HZO). The low frequency noise is found to decrease with thicker ferroelectric HZO in the subthreshold regime of the MoS2 NC-FETs, in stark contrast to the conventional high-k transistors. This result can be interpreted as electrostatic improvement induced by the negative capacitance effect. It demonstrates that negative capacitance can not only improve the device performance in the on-and off-states, but also suppress the noise of the devices.