Abstract
Conference Title: 2015 IEEE Photonics Conference (IPC) Conference Start Date: 2015, Oct. 4 Conference End Date: 2015, Oct. 8 Conference Location: Reston, VA, USA In summary, we demonstrated the monolithic integration of electroabsorption modulator with laser diode and measured DC and AC modulation characteristics of the device, which is grown on (2021[COMBINING OVERLINE]) plane GaN substrate. By alternating the modulation voltage at -3.5 V and 0 V, we achieve the laser output power of < 1.5 mW to > 9 mW, respectively, leading to ∼8.1 dB On/Off ratio. Our results clearly show that a low power consumption modulator can be achieved with semipolar EA-modulator compared to that of the c-plane devices.