MBE grown monocrystalline GaAs films on polycrystalline AlN thick films for power device applications

Conference proceeding

Peer reviewed

Y Wang, LEUNG YEE Wai, HUI Liu, XIXIANG Zhang, YUCHUN Chang, HAILIN Luo, LIREN Lou and RONG CHUAN Fang

Journal of crystal growth, Vol.227-28, pp.177-182

Molecular Beam Epitaxy 2000. Proceedings of the Eleventh International Conference on Molecular Beam Epitaxy, Beijing, China, 11-15 September 2000

2001

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Cross-disciplinary physics: materials science; rheology

Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures

Exact sciences and technology

Materials science

Methods of deposition of films and coatings; film growth and epitaxy

Molecular, atomic, ion, and chemical beam epitaxy

Physics

Surface double layers, schottky barriers, and work functions

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Title: MBE grown monocrystalline GaAs films on polycrystalline AlN thick films for power device applications
Creators - without role: Y Wang - University of Hong Kong
LEUNG YEE Wai - University of Hong Kong
HUI Liu - University of Hong Kong
XIXIANG Zhang - University of Hong Kong
YUCHUN Chang - University of Hong Kong
HAILIN Luo - University of Hong Kong
LIREN Lou - Physics Department, University of Science & Technology of China, Hefei, China
RONG CHUAN Fang - Physics Department, University of Science & Technology of China, Hefei, China
Publication Details: Journal of crystal growth, Vol.227-28, pp.177-182
Conference: Molecular Beam Epitaxy 2000. Proceedings of the Eleventh International Conference on Molecular Beam Epitaxy, Beijing, China, 11-15 September 2000
Publisher: Elsevier
Identifiers: 9945830508331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding