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MOS memory with ultrathin Al2O3-TiO2 nanolaminates tunnel oxide and 2.85-nm Si-nanoparticles charge trapping layer
Conference proceeding

MOS memory with ultrathin Al2O3-TiO2 nanolaminates tunnel oxide and 2.85-nm Si-nanoparticles charge trapping layer

Nazek El-Atab, Ammar Nayfeh, Berk Berkan Turgut and Ali K Okyay
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Conference Proceedings, p.663
01/07/2015

Abstract

  Conference Title: 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) Conference Start Date: 2015, July 27 Conference End Date: 2015, July 30 Conference Location: Rome, Italy 10 years) makes such memory structure promising for applications in non-volatile memory devices.

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