Abstract
Adopting GaN can improve system performance in efficiency, thermal capability, and system size. GaN-based system design has been demonstrated across a range of voltage and power levels, in many different topologies, and for a variety of applications. Migrating an existing Si-based design to GaN typically involves optimizing the PCB layout and gate driving circuits, characterization and modeling of power losses, fast overcurrent protection, and consideration of thermal performance. Furthermore, it is important to understand the key parameters and reliability standards for GaN when selecting an appropriate device. This paper reviews the state-of-the-art in commercial GaN transistors, addresses application challenges, then reviews examples of successful design migrations. Examples include hard-switching and soft-switching topologies based on 100 V and 600 V enhancement-mode GaN FETs.