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Minimal Disturbed Bits in Writing Resistive Crossbar Memories
Conference proceeding

Minimal Disturbed Bits in Writing Resistive Crossbar Memories

Mohammed E. Fouda, Ahmed M. Eltawil, Fadi Kurdahi and ACM
NANOARCH'18: PROCEEDINGS OF THE 14TH IEEE/ACM INTERNATIONAL SYMPOSIUM ON NANOSCALE ARCHITECTURES, pp.98-100
01/01/2018
DOI: https://doi.org/10.1145/3232195.3232207

Abstract

Computer Science Computer Science, Theory & Methods Engineering Engineering, Electrical & Electronic Nanoscience & Nanotechnology Science & Technology Science & Technology - Other Topics Technology
Resistive memories are promising candidates for non-volatile memories. Write disturb is one of problems that facing this kind of memories. In this paper, the write disturb problem is mathematically formulated in terms of the bias parameters and optimized analytically. A closed form solution for the optimal bias parameters is calculated. Results are compared with the 1/2 and 1/3 bias schemes showing a significant improvement.

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