MoOx and WOx based hole-selective contacts for wafer-based Si solar cells

Stephanie Essig; Julie Dréon; Jérémie Werner; Philipp Löper; Stefaan De Wolf; Mathieu Boccard; Christophe Ballif; IEEE

doi:10.1109/PVSC.2017.8366692

Conference proceeding

MoOx and WOx based hole-selective contacts for wafer-based Si solar cells

Stephanie Essig, Julie Dréon, Jérémie Werner, Philipp Löper, Stefaan De Wolf, Mathieu Boccard, Christophe Ballif and IEEE

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), pp.55-58

06/2017

DOI: https://doi.org/10.1109/PVSC.2017.8366692

Abstract

Buffer layers

carrier-selective contacts

Heterojunctions

Passivation

Performance evaluation

Photovoltaic cells

Silicon

Silicon heterojunction solar cell

Tools

transition metal oxides

Highly-transparent carrier-selective front contacts open a pathway towards entirely dopant free Si solar cells. Holeselective a-Si:H/MoO x /ITO front contact stacks were already successfully applied in such novel devices. However, for optimum device performance, further improvements are required: We evaluate the use of the high-work-function material WO x as a replacement for MoO x in an attempt to reduce optical absorption losses. In addition, we investigate the use of thin hydrogenated SiO X instead of a-Si:H, and the impact of the residual pressure for MoO x evaporation.

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Title: MoOx and WOx based hole-selective contacts for wafer-based Si solar cells
Creators - without role: Stephanie Essig - University of Neuchâtel
Julie Dréon - University of Neuchâtel
Jérémie Werner - University of Neuchâtel
Philipp Löper - University of Neuchâtel
Stefaan De Wolf - King Abdullah University of Science and Technology
Mathieu Boccard - University of Neuchâtel
Christophe Ballif - University of Neuchâtel
IEEE
Publication Details: 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), pp.55-58
Publisher: IEEE
Identifiers: 9945241508331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding