Abstract
In this paper, we present a complete modeling methodology for fully integrated inductively degenerated cascode ultrawideband low noise amplifiers (LNA) with generalized filter-based impedance matching networks. Our accurate analytical models capture the impact of device and passive component parasitics and transistor short channel effects to closely match circuit simulation results. Utilizing our method, we are able to accurately generate an ultrawideband LNA in the 3.1 to 10.6 GHz band using third and fifth order Chebyshev filters as input matching networks. Both of the designs achieve a power gain greater than 9dB, input and output impedance matching less than -9dB, and a noise figure from less than 3.4dB when using a TSMC 0.18 mu m mixed-signal/RF model. The performance parameters for the third order filter configuration exceed the results reported from previous ultrawideband designs.