Abstract
The silicon nanowires (SiNWs) were growth on Si(100) surface by electroless metal deposition in ionic metal hydro fluoric solution. The growth mechanisms of SiNWs were analyzed on the basis of a self-assembled localized microscopic electrochemical model through selective etching on the silicon substrate. From AFM and FESEM images were found that orientation of SiNWs is perpendicular to the surface of silicon. SiNWs have been grown significant in vertical and one dimensional (1D) direction. The diameter of the wire is less than 100 nm which is dependent of the surrounding pores size due to etching process. The average roughness of 132.1 nm was obtained from AFM image, as well as the peak-to-valley roughness takes value of up to 911.7 nm. On the other sample was found that the peak-to-valley roughness of a selected area of surface up to 3.183 mu m obtained by NC-AFM image analysis.