Multistate per-cell magnetoresistive random-access memory written at Curie point

Y. K Zheng; Y. H WU; Z. B Guo; G. C Han; K. B LI; J. J Qiu; H Xie; P Luo

doi:10.1109/TMAG.2002.802858

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Conference proceeding

Multistate per-cell magnetoresistive random-access memory written at Curie point

Y. K Zheng, Y. H WU, Z. B Guo, G. C Han, K. B LI, J. J Qiu, H Xie and P Luo

IEEE transactions on magnetics, Vol.38(5), pp.2850-2852

Selected papers from the 2002 international magnetics conference (INTERMAG 2002), Amsterdam, The Netherlands, April 28-May 2, 2002 (Part I of two parts)

01/09/2002

DOI: https://doi.org/10.1109/TMAG.2002.802858

Abstract

Applied sciences

Electronics

Exact sciences and technology

Magnetic devices

Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: Multistate per-cell magnetoresistive random-access memory written at Curie point
Creators - without role: Y. K Zheng - Data Storage Institute
Y. H WU - Data Storage Institute
Z. B Guo - Data Storage Institute
G. C Han - Data Storage Institute
K. B LI - Data Storage Institute
J. J Qiu - Data Storage Institute
H Xie - Data Storage Institute
P Luo - Data Storage Institute
Publication Details: IEEE transactions on magnetics, Vol.38(5), pp.2850-2852
Conference: Selected papers from the 2002 international magnetics conference (INTERMAG 2002), Amsterdam, The Netherlands, April 28-May 2, 2002 (Part I of two parts)
Publisher: Institute of Electrical and Electronics Engineers
Identifiers: 9945816808331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding