Abstract
CaCu3Ti4O12 (CCTO) is a promising material for microelectronic and microwave device applications due to its unique properties that posses high dielectric constant in the wide temperature range. In this work, atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses were applied for nanoscale imaging of Nb-doped CCTO grains. The Nb-doped CCTO pellets (CaCu3Ti4--xNbxO12+x/2; x = 0, 0.01, 0.03, 0.05, 0.1) were prepared via solid state reaction method and thermally etched at 940 degrees C for an hour. From AFM and SEM images found that tiny bumped as well as terrace type domains are distributed within a grain. The domain size is ranging from 20 to 180 nm measured by AFM. The existence of domains on grain will produce grain boundary and domain boundary resistance inside CCTO. Both domain and grain resistance are believed to strongly influence the electrical properties of CCTO.