Abstract
Sub-micrometer copper nanostructures were deposited on p-type silicon (p-Si) by means of a selective electrochemical reaction. Ga+-ions from a focused ion beam (FIB) were used to 'write' damage patterns on p-Si; in a subsequent electrochemical reaction Cu was deposited selectively at these defect sites. So far we have been able to obtain Cu structures with a lateral resolution of 300 nm, which is also the limit of the FIB currently used.
The process may offer advantages over traditional lithographic methods for producing nanometer sized metal structure on Si as no masking steps are required. Also, structures with a lateral resolution in the sub-100nm region seem possible; so far the process has only been limited by the FIB's lateral resolution.