New PL emission lines in ion-implanted ultrapure LEC InP

Y. Makita; A. Yamada; H. Yoshinaga; T. Iida; S. Niki; S. Uekusa; T. Matsumori; K. Kainosho; O. Oda; IEEE

doi:10.1109/ICIPRM.1992.235609

Back

Conference proceeding

New PL emission lines in ion-implanted ultrapure LEC InP

Y. Makita, A. Yamada, H. Yoshinaga, T. Iida, S. Niki, S. Uekusa, T. Matsumori, K. Kainosho, O. Oda and IEEE

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, pp.626-629

1992

DOI: https://doi.org/10.1109/ICIPRM.1992.235609

Abstract

Annealing

Electrons

Energy states

Excitons

Gallium arsenide

Indium phosphide

Ion implantation

Photoluminescence

Pollution measurement

Semiconductor impurities

Mg/sup +/ ions were implanted into undoped liquid encapsulation Czochralski (LEC) InP having different residual net electron concentrations. Photoluminescence (PL) measurements at 2 K for ultrapure InP presented two new emissions slightly below bound exciton emissions. A sharp emission, 'g', is formed in lightly doped InP and is ascribed to a new energy state of isolated-acceptor. A broad emission, (g-g), was observed in moderately doped InP and is attributed to acceptor-acceptor pairs. These emissions were suggested to be common occurrences in acceptor-doped III-V semiconductors and were confirmed to be easily annihilated by small amounts of donor impurities.< >

Metrics

1 Record Views

Details

Title: New PL emission lines in ion-implanted ultrapure LEC InP
Creators - without role: Y. Makita - Electrotech. Lab., Ibaraki, Japan
A. Yamada - Electrotech. Lab., Ibaraki, Japan
H. Yoshinaga - Tokai University
T. Iida - Department of Materials Science and Technology
S. Niki - National Institute of Advanced Industrial Science and Technology
S. Uekusa - Meiji University
T. Matsumori - Tokai University
K. Kainosho - Nippon Mining Co., Ltd.
O. Oda - Nippon Mining Co., Ltd.
IEEE
Publication Details: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, pp.626-629
Publisher: IEEE
Identifiers: 9920828008331
Academic Unit: King Saud Bin Abdulaziz University for Health Sciences
Language: English
Resource Type: Conference proceeding