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New insights on the origin of Resistive switching in HfO2 thin films: The role of local mechanical strength
Conference proceeding

New insights on the origin of Resistive switching in HfO2 thin films: The role of local mechanical strength

Yuanyuan Shi, Yanfeng Ji, Fei Hui, Montserrat Nafria, Marc Porti, Gennadi Bersuker, Mario Lanza and IEEE
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, Vol.2015-, pp.472-475
06/2015
DOI: https://doi.org/10.1109/IPFA.2015.7224435

Abstract

Annealing Dielectrics Films Grain boundaries Hafnium compounds Surface morphology Switches
In the Resistive Random Access Memory (RRAM) devices, switching between high and low resistive states is controlled by the processes of disruption and restoration of a conductive filament, which could be formed through the dielectric film. In this study, we demonstrate that RS is strongly linked to the mechanical properties of the insulator that should be considered in the design of flexible memories, which are usually subjected to significant mechanical strains.

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