Nitridation of thin metal layers by plasma immersion ion implantation for diffusion barrier applications

Mukesh Kumar; - Rajkumar; Dinesh Kumar

doi:10.1117/12.638332

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Nitridation of thin metal layers by plasma immersion ion implantation for diffusion barrier applications

Mukesh Kumar, - Rajkumar and Dinesh Kumar

Proceedings of SPIE, Vol.6037(1), pp.60371E-60371E-6

Device and Process Technologies for Microelectronics, MEMS, and Photonics IV

28/12/2005

DOI: https://doi.org/10.1117/12.638332

Abstract

For this study, Ti/Si and Ta/Si structures were implanted with two doses of nitrogen 10 ions/cm (low dose) and 10 ions/cm (high dose) at 10KeV and 20KeV energy. Characterization was performed by Sheet resistance measurement and X-Ray diffraction (XRD) techniques. Results shows that implantation of 10 ions/cm dose of nitrogen does not cause any nitridation, while in case of high dose implanted samples formation of tantalum nitride phase was observed. Nitride layers formed this way was used as diffusion barrier layers for copper metallization in Silicon based integrated circuits.

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Title: Nitridation of thin metal layers by plasma immersion ion implantation for diffusion barrier applications
Creators - without role: Mukesh Kumar - Kurukshetra University
- Rajkumar - Kurukshetra University
Dinesh Kumar - Kurukshetra University
Publication Details: Proceedings of SPIE, Vol.6037(1), pp.60371E-60371E-6
Conference: Device and Process Technologies for Microelectronics, MEMS, and Photonics IV
Identifiers: 9925960708331
Academic Unit: Prince Sattam Bin Abdulaziz University
Language: English
Resource Type: Conference proceeding