Abstract
We propose a new nitride photocatalyst of an n-n(+)-GaN structure to increase H-2 gas generation. This structure consists of a thin lightly-doped n-type layer on a heavily-doped n(+)-type layer to realize an optimized depletion layer for opticat absorption and highly conductive region, respectively. An optimized n-n(+)-GaN structure could generate much more H-2 gas rather than a single n-GaN layer structure by about 1.4 times.